Spin polarization through intersystem crossing in the silicon vacancy of silicon carbide

Citation

Dong, W, Doherty, M & Economou, S 2019, 'Spin polarization through intersystem crossing in the silicon vacancy of silicon carbide', Physical Review B, vol. 99, no. 18, pp. 1-14.

Year

2019

ANU Authors

Fields of Research

  • Quantum Information, Computation And Communication
  • Nanometrology

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