Determination of Dopant Den... - Researchers

Determination of Dopant Density Profiles of Heavily Boron-Doped Silicon From Low Temperature Microphotoluminescence Spectroscopy

Citation

Han, Y, Franklin, E, MacDonald, D et al 2017, 'Determination of Dopant Density Profiles of Heavily Boron-Doped Silicon From Low Temperature Microphotoluminescence Spectroscopy', IEEE Journal of Photovoltaics, vol. 7, no. 6, pp. 1693-1700.

Year

2017

ANU Authors

Professor Daniel MacDonald
Dr Hieu Nguyen

Field of Research

Compound Semiconductors

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