Activation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence
Citation
Sun, C, Nguyen, H, Sio, H et al 2017, 'Activation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence', IEEE Journal of Photovoltaics, vol. 7, no. 4, pp. 988-995.Year
2017ANU Authors
Field of Research
- Compound Semiconductors