Activation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence

Citation

Sun, C, Nguyen, H, Sio, H et al 2017, 'Activation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence', IEEE Journal of Photovoltaics, vol. 7, no. 4, pp. 988-995.

Year

2017

Field of Research

  • Compound Semiconductors

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