Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide
Citation
Cui, J, Wan, Y, Cui, Y et al. 2017, 'Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide', Applied Physics Letters, vol. 110, no. 2, pp. -.Year
2017ANU Authors
Field of Research
- Photodetectors, Optical Sensors And Solar Cells