Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide

Citation

Cui, J, Wan, Y, Cui, Y et al 2017, 'Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide', Applied Physics Letters, vol. 110, no. 2, pp. -.

Year

2017

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

Updated:  08 December 2021 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers