Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide

Citation

Cui, J, Wan, Y, Cui, Y et al. 2017, 'Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide', Applied Physics Letters, vol. 110, no. 2, pp. -.

Year

2017

ANU Authors

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

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