Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

Citation

Sun, C, Nguyen, H, Rougieux, F et al 2017, 'Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging', Journal of Crystal Growth, vol. 460, pp. 98-104pp.

Year

2017

Field of Research

  • Chemical Engineering Design

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