Growth of Oxygen Precipitat... - Researchers

Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

Citation

Rougieux, F, Nguyen, H, MacDonald, D et al 2017, 'Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon', IEEE Journal of Photovoltaics, vol. 7, no. 3, pp. 735-740.

Year

2017

ANU Authors

Dr Hieu Nguyen
Professor Daniel MacDonald

Field of Research

Structural Chemistry And Spectroscopy

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