Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

Citation

Liu, A, Nguyen, H & MacDonald, D 2016, 'Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K', Physica Status Solidi A, vol. 213, no. 11, pp. 3029-3032.

Year

2016

Field of Research

  • Power And Energy Systems Engineering (Excl. Renewable Power)

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