Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K
Citation
Liu, A, Nguyen, H & MacDonald, D 2016, 'Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K', Physica Status Solidi A, vol. 213, no. 11, pp. 3029-3032.Year
2016ANU Authors
Field of Research
- Power And Energy Systems Engineering (Excl. Renewable Power)