Impact of Phosphorous Gette... - Researchers

Impact of Phosphorous Gettering and Hydrogenation on the Surface Recombination Velocity of Grain Boundaries in p-Type Multicrystalline Silicon

Citation

Sio, H, Phang, S, Trupke, T et al. 2015, 'Impact of Phosphorous Gettering and Hydrogenation on the Surface Recombination Velocity of Grain Boundaries in p-Type Multicrystalline Silicon', IEEE Journal of Photovoltaics, vol. 5, no. 5, pp. 1357-1365.

Year

2015

ANU Authors

Dr Sieu Pheng Phang
Professor Daniel MacDonald

Field of Research

Photodetectors, Optical Sensors And Solar Cells

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