Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon

Citation

Zheng, P, Rougieux, F, Grant, N et al 2015, 'Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon', IEEE Journal of Photovoltaics, vol. 5, no. 1, pp. 183-188.

Year

2015

Fields of Research

  • Asian History
  • European History (Excl. British, Classical Greek And Roman)

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