Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging

Citation

Sio, H, Trupke, T & MacDonald, D 2014, 'Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging', Journal of Applied Physics, vol. 116, no. 24, pp. 1-9.

Year

2014

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

Updated:  27 September 2021 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers