Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging

Citation

Sio, H, Trupke, T & MacDonald, D 2014, 'Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging', Journal of Applied Physics, vol. 116, no. 24, pp. 1-9.

Year

2014

Field of Research

  • Photodetectors, Optical Sensors And Solar Cells

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